Metal wiring etching method

摘要: PROBLEM TO BE SOLVED: To lessen dispersion in etched dimensions a base barrier metal layer by completing with one patterning of resist into an etching mask when aluminum alloy wiring not less than 3 μm thickness deposited on the is patterned as desired semiconductor device manufacturing process. SOLUTION: A 36 formed, and then wet performed using mixed acid for removal part 35 exposure surface 32; small-power plasma at 0.2-2.0 W/cm 2 gas containing fluorine-based Si particles exposed dry chlorine-based partial lower removed. COPYRIGHT: (C)2004,JPO