The relationship between hydrogen and paramagnetic defects in thin film silicon irradiated with 2 MeV electrons

摘要: After irradiation of hydrogenated amorphous and microcrystalline silicon (a-Si:H μc-Si:H) with 2 MeV electrons at 100 K, we observe satellite-like components close to the dominating electron spin resonance (ESR) signal these materials. The satellites overlap commonly observed dangling bond are proposed originate from a hyperfine interaction nuclear magnetic moment hydrogen atoms in a-Si:H μc-Si:H. Our present study is focused on verification this hypothesis. Equivalent deuterated a-/μc-Si:H/D materials have been investigated ESR before after bombardment. From difference between spectra samples identify doublet structure as pattern hydrogen-related paramagnetic centers. observations H-related centers a-/μc-Si:H particular interest view metastability models a-Si:H, which include complexes precursors for stabilization metastable Si bonds. nature center discussed light known crystalline suggested bonds a-Si:H.