Progress in Piezo-Phototronic-Effect-Enhanced Light-Emitting Diodes and Pressure Imaging

摘要: Wurtzite materials exhibit both semiconductor and piezoelectric properties under strains due to the non-central symmetric crystal structures. The three-way coupling of properties, polarization optical excitation in ZnO, GaN, CdS other semiconductors leads emerging field piezo-phototronics. This effect can efficiently manipulate emission intensity light-emitting diodes (LEDs) by utilizing piezo-polarization charges created at junction upon straining modulate energy band diagrams optoelectronic processes, such as generation, separation, recombination and/or transport charge carriers. Starting from fundamental physics principles, recent progress piezo-phototronic-effect-enhanced LEDs is reviewed; following their development single-nanowire pressure-sensitive devices high-resolution array matrices for pressure-distribution mapping applications. piezo-phototronic provides a promising method enhance light based on through applying static strains, may find perspective applications various integrated systems.