High voltage LDMOS transistor
作者： William Wei-Yuan Tien , Fu-Hsin Chen , Chao-Wei Tseng
DOI:
关键词:
摘要: An LDMOS transistor structure and methods of making the same are provided. The includes a gate electrode extended on an upper boundary extension dielectric region that separates from drain transistor. Moreover, at area close to edge portion, further projects downwards into convex-shaped recess or groove in region, forming tongue. transistors with this may provide improved suppression hot carrier effects.
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