Controllable growth of oriented ZnO nanorods using Ga-doped seed layers and surface acoustic wave humidity sensor
作者： Hoang-Si Hong , Gwiy-Sang Chung
DOI: 10.1016/J.SNB.2013.12.120
关键词:
摘要: Abstract ZnO nanorods were grown on a Si/AlN structure using hydrothermal method. The fabricated nanorod film was used as sensitive material layer for surface acoustic wave (SAW) humidity sensor. concentration of gallium, which doped into seed layers prior to chemical growth, varied from 0 wt% 3 wt% control growth. result shows that gallium dopant crucial controllable dimension nanorods. length increased and diameter decreased when Ga 3 wt%. had hexagonal wurtzite structure, aligned vertically the substrate. SAW properties (e.g., resonance frequency) over relative (RH) ranging 10% 90% at room temperature investigated. results show frequency shift sensors with increasing concentration. largest in response approximately 970 kHz RH Ga-doped layer. This caused by highest surface-to-volume ratio sensing
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