Microstructure and thermoelectric properties of SiGe-added higher manganese silicides
作者： A.J. Zhou , X.B. Zhao , T.J. Zhu , S.H. Yang , T. Dasgupta
DOI: 10.1016/J.MATCHEMPHYS.2010.08.017
关键词:
摘要: Abstract Polycrystalline higher manganese silicides (HMS) with SiGe-additions were synthesized and their microstructure thermoelectric properties investigated. The SiGe-addition was found to have introduced dual effects, namely the substitution of Ge precipitation Si–Ge phases. volume ratio MnSi striations in HMS decreased by increasing amount SiGe-addition, while precipitations various Si/Ge ratios simultaneously formed. electrical conductivity electronic contribution thermal increased SiGe-addition. However, Seebeck coefficient showed insignificant change phonon effectively reduced, which attributed enhanced scattering phonons resulted atoms for Si. maximum ZT 0.5 achieved polycrystalline MnSi1.733–2%SiGe at 550 °C showing 25% improvement compared pure HMS.
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