作者: J.A. Van Vechten
DOI: 10.1016/B978-0-08-017955-1.50015-4
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摘要: ABSTRACT Theoretical methods for the prediction of semiconductor-metal phase transitions from electronic properties these phases are briefly reviewed. It is shown that, this purpose, spectroscopic scaling procedure developed by Phillips and Van Vechten preferable to a bandstructure calculation. The effect disorder concomitant with substitutional alloying doping introduced into electronic/optical spectra. induced enthalpy mixing calculated. From liquidus solidus curves impurity distribution coefficients