Integration of screen-printing and rapid thermal processing technologies for silicon solar cell fabrication
作者： P. Doshi , J. Mejia , K. Tate , A. Rohatgi
DOI: 10.1109/55.511589
关键词:
摘要: For the first time, potentially cost-effective technologies of rapid thermal processing (RTP) and screen-printing (SP) have been combined into a single process sequence to achieve solar cell efficiencies as high 14.7% on 0.2 /spl Omega/-cm FZ 14.8% 3 Cz silicon. These results were achieved without application nonhomogeneous (selective) emitter, texturing, or oxide passivation. By tailoring RTP cycles for emitter diffusion firing screen-printed silver contacts, fill factor values >0.79 realized emitters with sheet resistance (/spl rho//sub s/) sim/20 Omega///spl square/ grid shading <6%. Such factors clearly demonstrate that contacts can be fired extremely shallow (x/sub j/=0.25-0.3 mu/m) shunting cells. IQE analysis depicts strong preference junction depths optimal short wavelength response these unpassivated emitters. In some cases, front printed through plasma enhanced chemical vapor deposited (PECVD) SiN/SiO/sub 2/ dielectrics which prevented by serving partial barriers minimizing metallic species from contacts. The PECVD films, multiple purposes contact formation, efficient surface passivation due annealing SiN, quality antireflection (AR). Research is presently underway further optimize design develop techniques implementing selective higher efficiency
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