50-nm x-ray lithography using synchrotron radiation

摘要: A technology of proximity x‐ray lithography has been developed to replicate patterns sub‐100‐nm feature size using synchrotron radiation. Process modeling done in advance order optimize the mask absorber thickness. It is shown that with tungsten absorber, a 0.3 μm thickness most desirable for 50 nm linewidth processing. Masks compatible Karl Suss stepper have fabricated keV electron‐beam and reactive ion etching techniques. As result, well‐defined 50‐nm‐wide isolated W lines small gratings period down 100 fabricated. Then they replicated under condition Super ACO We present details replication procedure gap settings 5 show how sub‐100 structures can be 1:1 printed into both poly (methylmethacrylate) (PMMA) (8.5%) MAA/PMMA resists. Finally, results are analyzed terms scaling rule evaluate resolution limit as function source.