Ultrafast Optical Absorption Measurments of Electron-Phonon Scattering in GaAs Quantum Wells

作者: K. Turner , L. Rota , R. A. Taylor , J. F. Ryan

DOI: 10.1007/978-1-4613-0401-2_6

关键词:

摘要: A knowlege of intra- and intersubband electron-phonon scattering rates in quantum wells is central to the understanding manipulation hot carrier dynamics nanostructures. significant amount both experimental theoretical work has been reported on this issue, but variations over two orders magnitude exist measured rates. Our purpose here provide a joint investigation which avoids many problems clarifies inconsistencies encountered by previous reports.

参考文章(13)
M. C. Tatham, J. F. Ryan, C. T. Foxon, Time-resolved Raman measurements of intersubband relaxation in GaAs quantum wells. Physical Review Letters. ,vol. 63, pp. 1637- 1640 ,(1989) , 10.1103/PHYSREVLETT.63.1637
S. Hunsche, K. Leo, H. Kurz, K. Köhler, FEMTOSECOND INTERSUBBAND RELAXATION IN GAAS QUANTUM WELLS Physical Review B. ,vol. 50, pp. 5791- 5794 ,(1994) , 10.1103/PHYSREVB.50.5791
D. Morris, D. Houde, B. Deveaud, A. Regreny, Ultrafast dynamics of intersubband relaxation in GaAs quantum wells: hot carrier and phonon populations effects Superlattices and Microstructures. ,vol. 15, pp. 309- 312 ,(1994) , 10.1006/SPMI.1994.1059
N. Mori, T. Ando, Electron – optical-phonon interaction in single and double heterostructures Physical Review B. ,vol. 40, pp. 6175- 6188 ,(1989) , 10.1103/PHYSREVB.40.6175
L. Rota, D. K. Ferry, Monte Carlo investigation of carrier‐carrier effects in femtosecond pump and probe experiments Applied Physics Letters. ,vol. 62, pp. 2883- 2885 ,(1993) , 10.1063/1.109189
A. Seilmeier, H.-J. Hübner, G. Abstreiter, G. Weimann, W. Schlapp, Intersubband relaxation in GaAs-Al x Ga 1-x As quantum well structures observed directly by an infrared bleaching technique Physical Review Letters. ,vol. 59, pp. 1345- 1348 ,(1987) , 10.1103/PHYSREVLETT.59.1345
Jagdeep Shah, Benoit Deveaud, T. C. Damen, W. T. Tsang, A. C. Gossard, P. Lugli, Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopy. Physical Review Letters. ,vol. 59, pp. 2222- 2225 ,(1987) , 10.1103/PHYSREVLETT.59.2222
J. A. Levenson, G. Dolique, J. L. Oudar, I. Abram, Intersubband carrier relaxation in highly excited GaAs/Ga1-xAlxAs multiple quantum wells Physical Review B. ,vol. 41, pp. 3688- 3694 ,(1990) , 10.1103/PHYSREVB.41.3688
D. Y. Oberli, D. R. Wake, M. V. Klein, J. Klem, T. Henderson, H. Morkoç, Time-resolved Raman scattering in GaAs quantum wells Physical Review Letters. ,vol. 59, pp. 696- 699 ,(1987) , 10.1103/PHYSREVLETT.59.696
Lucio Rota, Paolo Lugli, Thomas Elsaesser, Jagdeep Shah, Ultrafast thermalization of photoexcited carriers in polar semiconductors. Physical Review B. ,vol. 47, pp. 4226- 4237 ,(1993) , 10.1103/PHYSREVB.47.4226