Optoelectronic and structural properties of a-Ge1−xCx:H prepared by rf reactive cosputtering
作者： J. Vilcarromero , F. C. Marques , F. L. Freire
DOI: 10.1063/1.368093
关键词:
摘要: Optoelectronic, structural, and mechanical properties of hydrogenated amorphous germanium carbon (a-Ge1−xCx:H) alloys are presented. The films were prepared by the rf cosputtering technique using graphite-germanium composite targets. Films with contents in 0
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