Reabsorption kinetics of free- and bound-exciton luminescence in high-purity n-GaAs
作者： K. Aoki , K. Yamamoto
DOI: 10.1016/0022-2313(84)90330-2
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摘要: Abstract Reabsorption kinetics of free- and bound-exciton luminescence have been studied in high-purity n-GaAs at 4.2 K, by a sensitive detection method using the dual laser beams. As well as large reabsorption effects (D o ,X) line, anomaly exciton-polariton just above bottleneck region has found for first time. The properties significantly depend upon sample treatments.
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