High‐Temperature Electrical Properties of Manganese Monoxide

摘要: The deviation from stoichiometry, the electrical conductance G, and Seebeck coefficient Q of MnO were measured as function temperature T oxygen partial pressure, P(O2), where varied between 1100° 1557°C P(O2) 10−18 to 10−1 atm. We found that is an oxygen‐excess compound, dominant defects being manganese vacancies. In range which corresponds P(CO2)/P(CO)<50, these vacancies are mainly doubly ionized, concentration holes proportional one‐sixth power exceeds free electrons in all or most this range. mobility was shown be greater by a factor 10 more than holes. This feature responsible for fact P(CO2)/P(CO)<1 oxide behaves like n‐type semiconductor, i.e., negative G P(O2). intrinsic point, n=p, occurs at much lower pressures may indeed fall outside ou...