作者: Jean-Paul Mazellier , Michel Mermoux , Francois Andrieu , Julie Widiez , Jérôme Dechamp
DOI: 10.1063/1.3643006
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摘要: Silicon-on-diamond (SOD) wafers potentially present thermal advantages over standard silicon-on-insulator (SOI) counterparts based on SiO2 as the buried insulating layer. This work reports fabrication of high quality SOD by bond and etch back SOI process. One key parameter in CVD diamond growth process is substrate temperature. We focused here two processes either or low processing temperature to produce nanocrystalline (NCD) silicon. Both type NCD films have been analyzed via Raman spectroscopy. Results correlated with scanning electron microscopy observations. In a second part, are fabricated crystalline active silicon layer assessed measurements resolution transmission imaging. It shown that did not induce any structural defect strain thin top Eventually, we demonstrate efficiency integration thanks t...