Effect of ionization potential change in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) on the performance of polymer light emitting diodes due to its reaction with indium tin oxide
作者： Chih-Hao Chang , Show-An Chen
DOI: 10.1063/1.2759474
关键词:
摘要: Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) is usually used to facilitate hole injection in polymer light emitting diodes. The authors ultraviolet photoelectron spectroscopy investigate ionization potential (IP) changes of PEDOT:PSS spin coated on indium tin oxide (ITO), and found that increasing delay time baking after coating decreases its IP increases barrier polymer. change attributed dedoping PEDOT due reaction ITO with protons PSS those doped the presence water. To get good performance bipolar device, film should be baked right coating.
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