Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides.

作者: Shanshan Wang , Alex Robertson , Jamie H. Warner

DOI: 10.1039/C8CS00236C

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摘要: Layered transition metal dichalcogenides (TMDs) offer monolayer 2D systems with diverse properties that extend beyond what graphene alone can achieve. The properties of TMDs …

参考文章(167)
Babak Anasori, Yu Xie, Majid Beidaghi, Jun Lu, Brian C. Hosler, Lars Hultman, Paul R. C. Kent, Yury Gogotsi, Michel W. Barsoum, Two-Dimensional, Ordered, Double Transition Metals Carbides (MXenes) ACS Nano. ,vol. 9, pp. 9507- 9516 ,(2015) , 10.1021/ACSNANO.5B03591
A. A. Balandin, R. Samnakay, D. Wickramaratne, T. T. Salguero, T. R. Pope, R. K. Lake, The Commensurate-Incommensurate Charge-Density-Wave Transition and Phonon Zone Folding in 1T-TaSe 2 Thin Films arXiv: Mesoscale and Nanoscale Physics. ,(2014) , 10.1021/NL504811S
Martin J. Hÿtch, Jean-Luc Putaux, Jean-Michel Pénisson, Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy Nature. ,vol. 423, pp. 270- 273 ,(2003) , 10.1038/NATURE01638
J. Jasinski, W. Swider, J. Washburn, Z. Liliental-Weber, A. Chaiken, K. Nauka, G. A. Gibson, C. C. Yang, Crystal structure of κ-In2Se3 Applied Physics Letters. ,vol. 81, pp. 4356- 4358 ,(2002) , 10.1063/1.1526925
A. Molina-Sánchez, L. Wirtz, Phonons in single-layer and few-layer MoS 2 and WS 2 Physical Review B. ,vol. 84, pp. 155413- ,(2011) , 10.1103/PHYSREVB.84.155413
Kaihui Liu, Liming Zhang, Ting Cao, Chenhao Jin, Diana Qiu, Qin Zhou, Alex Zettl, Peidong Yang, Steve G Louie, Feng Wang, Evolution of interlayer coupling in twisted molybdenum disulfide bilayers Nature Communications. ,vol. 5, pp. 4966- 4966 ,(2014) , 10.1038/NCOMMS5966
Xiaoxiang Xi, Liang Zhao, Zefang Wang, Helmuth Berger, László Forró, Jie Shan, Kin Fai Mak, Strongly enhanced charge-density-wave order in monolayer NbSe2. Nature Nanotechnology. ,vol. 10, pp. 765- 769 ,(2015) , 10.1038/NNANO.2015.143
J. Bennetto, R. W. Nunes, David Vanderbilt, PERIOD-DOUBLED STRUCTURE FOR THE 90 PARTIAL DISLOCATION IN SILICON Physical Review Letters. ,vol. 79, pp. 245- 248 ,(1997) , 10.1103/PHYSREVLETT.79.245
B. E. Brown, The crystal structures of WTe2 and high-temperature MoTe2 Acta Crystallographica. ,vol. 20, pp. 268- 274 ,(1966) , 10.1107/S0365110X66000513
Kin Fai Mak, Jie Shan, Jieun Lee, Electrical control of the valley Hall effect in bilayer MoS2 transistors. Nature Nanotechnology. ,vol. 11, pp. 421- 425 ,(2016) , 10.1038/NNANO.2015.337