Ar plasma-assisted P-doped Ni3S2 with S vacancies for efficient electrocatalytic water splitting.

摘要: Doping engineering is considered an effective way to improve the electrocatalytic water splitting performance of catalysts. In this paper, P-doped Ni3S2/NF was prepared by Ar plasma-assisted chemical vapor deposition, where P dopant efficiently introduced into under assistance plasma. Meanwhile, numerous vacancies were generated due plasma bombardment. doping process, dopants replace S vacancies, which contributes strong bonding between and Ni3S2. Due synergistic effect Sv-Ni3S2−xPx-4 catalyst has low HER OER overpotentials 89 mV 216 at 10 mA cm−2, with a lower impedance value good stability. The present work shows facile route introduce materials for adding active sites, eventually improving their performance.