作者: Jonathan J. Scragg , Phillip J. Dale , Laurence M. Peter
DOI: 10.1016/J.ELECOM.2008.02.008
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摘要: Abstract The feasibility of a new fabrication route for films the attractive solar absorber Cu2ZnSnS4 (CZTS) has been studied, consisting electrodeposition metallic precursors followed by annealing in sulfur vapour. Photoelectrochemical measurements using Eu3+ contact have used to establish that polycrystalline CZTS are p-type with doping densities range (0.5–5) × 1016 cm−3 and band gaps 1.49 ± 0.01 eV, making them suitable terrestrial energy conversion. It shown somewhat Cu-poor composition favours good optoelectronic properties.