Effects of hydrogen plasma treatment on SnO2:F substrates for amorphous Si thin film solar cells
作者： Min-Seung Choi , Young-Ju Lee , Jung-Dae Kwon , Yongsoo Jeong , Ju-Yun Park
DOI: 10.1016/J.CAP.2013.06.023
关键词:
摘要: Abstract We investigated the effects of hydrogen plasma treatment on physical and electrical properties fluorine-doped tin oxide (FTO) films used for amorphous silicon (a-Si) thin film solar cells. A slight increase in carrier concentration by doping effect was observed FTO exposed to 5 min. For further exposure plasma, chemical reduction became prominent resulted deterioration optical film. XPS analysis revealed that SnO2 Sn metallic state occurs surface region. It found defects formed act as recombination centers at interface between electrode p-layer a-Si This phenomenon cell performance. The averaged conversion efficiency (6.82%) cells pristine substrate decreased 5.81% treated 5 min, which is mainly attributed decrease short-circuit current density.
harvard.edu
cheric.org
elsevier.com参考文章(16)
Chris G. Van de Walle, Hydrogen as a cause of doping in zinc oxide Physical Review Letters. ,vol. 85, pp. 1012- 1015 ,(2000) , 10.1103/PHYSREVLETT.85.1012
Chang-Yeoul Kim, Doh-Hyung Riu, Texture control of fluorine-doped tin oxide thin film Thin Solid Films. ,vol. 519, pp. 3081- 3085 ,(2011) , 10.1016/J.TSF.2010.12.096
Abhishek Kumar Singh, Anderson Janotti, Matthias Scheffler, Chris G. Van de Walle, Sources of electrical conductivity in SnO2. Physical Review Letters. ,vol. 101, pp. 055502- ,(2008) , 10.1103/PHYSREVLETT.101.055502
M. Kambe, M. Fukawa, N. Taneda, K. Sato, Improvement of a-Si solar cell properties by using SnO2:F TCO films coated with an ultra-thin TiO2 layer prepared by APCVD Solar Energy Materials and Solar Cells. ,vol. 90, pp. 3014- 3020 ,(2006) , 10.1016/J.SOLMAT.2006.06.008
Dong-Ho Kim, Sung-Hun Lee, Gun-Hwan Lee, Hyun-Bum Kim, Kwang Ho Kim, Yoon-Gyu Lee, Tae-Hwan Yu, Effects of deposition temperature on the effectiveness of hydrogen doping in Ga-doped ZnO thin films Journal of Applied Physics. ,vol. 108, pp. 023520- ,(2010) , 10.1063/1.3456527
N. Chantarat, Shu-Han Hsu, Chin-Ching Lin, Mei-Ching Chiang, San-Yuan Chen, Mechanism of an AZO-coated FTO film in improving the hydrogen plasma durability of transparent conducting oxide thin films for amorphous-silicon based tandem solar cells Journal of Materials Chemistry. ,vol. 22, pp. 8005- 8012 ,(2012) , 10.1039/C2JM15682B
S.W. King, R.F. Davis, R.J. Nemanich, Hydrogen desorption kinetics and band bending for 6H–SiC(0 0 0 1) surfaces Surface Science. ,vol. 603, pp. 3104- 3118 ,(2009) , 10.1016/J.SUSC.2009.08.023
Hye-Ri Kim, Gun-Hwan Lee, Dong-Ho Kim, Effects of hydrogen plasma treatment on the structural and electrical properties of sputter-deposited SnO2 thin films Journal of Physics D. ,vol. 44, pp. 185203- ,(2011) , 10.1088/0022-3727/44/18/185203
T. Minami, H. Sato, H. Nanto, S. Takata, Heat treatment in hydrogen gas and plasma for transparent conducting oxide films such as ZnO, SnO2 and indium tin oxide Thin Solid Films. ,vol. 176, pp. 277- 282 ,(1989) , 10.1016/0040-6090(89)90100-4
Chris G. Van de Walle, J. Neugebauer, Universal alignment of hydrogen levels in semiconductors, insulators and solutions Nature. ,vol. 423, pp. 626- 628 ,(2003) , 10.1038/NATURE01665