Ohmic N-contact formed at low temperature in inverted metamorphic multijunction solar cells
作者： Arthur Cornfeld , Tansen Varghese
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摘要: A method of forming a multijunction solar cell including an upper subcell, middle and lower subcell by providing substrate for the epitaxial growth semiconductor material; first on having band gap; second over gap smaller than graded interlayer third greater fourth such that is lattice mismatched with respect to subcell; contact composed sequence layers at temperature 280° C. or less resistance 5×10−4 ohms-cm2.
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