Free carrier absorption in silicon
作者： D.K. Schroder , R.N. Thomas , J.C. Swartz
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摘要: Free carrier absorption in heavily doped layers reduces the useful photon flux photoconductive region of extrinsic Si infrared detectors. A simple theory is developed which predicts transmissivity such as a function their sheet resistance and wavelength radiation. Experimental data over 2.5-20 µm 5-500 Ω/square range are given for both diffused ion-implanted also polysilicon gases. The temperature dependence investigated from 20 to 300 K.
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