Transistor antifuse for a programmable ROM
作者： Roger R. Lee
DOI:
关键词:
摘要: A programmable read-only memory device and method of fabrication are disclosed having an antifuse in the drain node a field effect transistor. Programming is accomplished by imposing high voltage on transistor gate which causes to be closed circuit; otherwise, appears as open circuit. Locating opposed source avoids problems reverse bias.
lens.org 参考文章(4)
George W. Conner, Saiyed A. Raza, Douglas F. Ridley, Sheldon C. P. Lim, Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer ,(1983)
Di Ma, David H. Hoffman, Process for fabricating self-aligned silicide lightly doped drain MOS devices ,(1988)
Amr M. Mohsen, Esmat Z. Hamdy, John L. McCullum, Programmable low-impedance anti-fuse element ,(1986)
Kevin G. Jew, Sheldon C. P. Lim, William T. Stacy, Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation ,(1983)