Ferroelectric liquid crystal and goggle type display devices
作者： Shunpei Yamazaki , Hiroki Adachi
DOI:
关键词:
摘要: The present invention relates to a semiconductor device including circuit composed of thin film transistors having novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. transistor comprises first gate electrode and second being in contact with the insulating film. Further, is formed by using as mask, source drain regions are mask. Then, overlapping formed. This structure provides high reliability.
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