作者: Zhuoqi Tang , David Furniss , Nigel C. Neate , Emma Barney , Trevor M. Benson
DOI: 10.1111/JACE.14218
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摘要: This work reports on process-induced impurities in rare-earth ion: Dy3+-doped selenide chalcogenide glasses, which are significant materials for active photonic devices the mid-infrared region. In particular, effect of contamination from silica glass ampoule containment used synthesis is studied. Heat-treating Dy-foil-only, and DyCl3-only, separately, within evacuated ampoules gives direct evidence corrosion by additives. The presence [Ga2Se3] associated with [Dy] that has been contact during melting, reported first time. Studies 0–3000 ppmw Ge16.5As9Ga10Se64.5 glasses show Dy-foil better than DyCl3 as Dy3+ additive Ge-As-Ga-Se aspects avoiding bulk crystallization, improving surface quality lowering optical loss. However, some limited Dy/Si/O related observed surfaces Dy-foil-doped found DyCl3-doped our previous work. indicates production Dy2O3 and/or [≡Si-O-Dy=]-containing particles potential light-scattering centers heterogeneous nucleation agents α-Ga2Se3 crystals.