Micromagnetic studies of read and write process in magnetoresistive random access memory
作者： Dan Wei , C. K. Ong , Zheng Yang
DOI: 10.1063/1.372301
关键词:
摘要: A micromagnetic model is established to analyze the read and write processes in a magnetoresistance random access memories (MRAM) cell. The magnetoresistive curves of NiFeCo/interlayer/NiFeCo cells are analyzed compared with available experiments. switching fields two magnetic layers B MRAM cell studied versus different geometrical parameters word current IwA IwB corresponding, respectively, films B, related error under given sense Is, experiment. In width W, proper such as thickness aspect ratio (length over width) found based on analysis IwA−Is IwB−Is curves.
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