Modeling of B diffusion in the presence of Ge
作者： Ljubo Radic , Antonio F. Saavedra , Kevin S. Jones , Mark E. Law
DOI: 10.1116/1.2151905
关键词:
摘要: In order to investigate the B and Ge interaction in silicon, an implant/anneal experiment is performed. The initial Si pre-amorphization step defines amorphous layer depth end-of-range point defect distributions for all samples. following implant provides a low content, thus minimizing strain band gap narrowing effects on diffusion of subsequent implant. control sample received implants. annealed profiles samples show profile broadening consistent with transient enhanced diffusion. tail implanted almost identical that samples, indicating does not act as trap BI pair. GeB complex, suggested literature, was used explain higher peak magnitude
scitation.org
aip.org
sci-hub.se 参考文章(17)
K. Rajendran, W. Schoenmaker, Studies of boron diffusivity in strained Si1−xGex epitaxial layers Journal of Applied Physics. ,vol. 89, pp. 980- 987 ,(2001) , 10.1063/1.1332803
N. Moriya, L. C. Feldman, H. S. Luftman, C. A. King, J. Bevk, B. Freer, Boron diffusion in strained Si1-xGex epitaxial layers. Physical Review Letters. ,vol. 71, pp. 883- 886 ,(1993) , 10.1103/PHYSREVLETT.71.883
P. A. Stolk, H.‐J. Gossmann, D. J. Eaglesham, D. C. Jacobson, J. M. Poate, H. S. Luftman, Trap‐limited interstitial diffusion and enhanced boron clustering in silicon Applied Physics Letters. ,vol. 66, pp. 568- 570 ,(1995) , 10.1063/1.114015
J. Hattendorf, W.-D. Zeitz, N.V. Abrosimov, W. Schröder, The interstitial boron and the boron–germanium complex in silicon–germanium crystals Physica B-condensed Matter. ,vol. 308, pp. 535- 538 ,(2001) , 10.1016/S0921-4526(01)00768-2
P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner, D. Lefforge, Effects of strain on boron diffusion in Si and Si1−xGex Applied Physics Letters. ,vol. 66, pp. 580- 582 ,(1995) , 10.1063/1.114019
K. S. Jones, L. H. Zhang, V. Krishnamoorthy, M. Law, D. S. Simons, P. Chi, L. Rubin, R. G. Elliman, Diffusion of ion implanted boron in preamorphized silicon Applied Physics Letters. ,vol. 68, pp. 2672- 2674 ,(1996) , 10.1063/1.116277
N. R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard Hansen, A. Nylandsted Larsen, Boron and phosphorus diffusion in strained and relaxed Si and SiGe Journal of Applied Physics. ,vol. 94, pp. 3883- 3890 ,(2003) , 10.1063/1.1602564
R. F. Lever, J. M. Bonar, A. F. W. Willoughby, Boron diffusion across silicon–silicon germanium boundaries Journal of Applied Physics. ,vol. 83, pp. 1988- 1994 ,(1998) , 10.1063/1.366927
K. S. Jones, R. G. Elliman, M. M. Petravić, P. Kringho/j, Using doping superlattices to study transient‐enhanced diffusion of boron in regrown silicon Applied Physics Letters. ,vol. 68, pp. 3111- 3113 ,(1996) , 10.1063/1.116439
Yaser M. Haddara, Brennan T. Folmer, Mark E. Law, Temel Buyuklimanli, Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon Applied Physics Letters. ,vol. 77, pp. 1976- 1978 ,(2000) , 10.1063/1.1313248