Pattern Roughness Mitigation of 22 nm Lines and Spaces: The Impact of a H2 Plasma Treatment
作者： Peter De Schepper , Alessandro Vaglio Pret , Ziad el Otell , Terje Hansen , Efrain Altamirano-Sanchez
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摘要: As the semiconductor industry pursues Moore's law, demand to obtain smaller features continues. Extreme ultraviolet (EUV) lithography remains one of primary options for sub-20 nm patterns. However, technology struggles meet line width roughness (LWR) specifications. In this article, we present significance plasma treatment as a smoothing technique. Two EUV photoresists with 22 lines are exposed various processes. We highlight advantages hydrogen and its vacuum (VUV) emission an optimal process discuss effect photoresist thickness, initial LWR VUV emission. Even though H2 results in successful reduction LWR/LER, target value below 2nm is not yet achieved.
sci-hub.se 参考文章(26)
Paulina A. Rincon Delgadillo, Roel Gronheid, Christopher J. Thode, Hengpeng Wu, Yi Cao, Mark Somervell, Kathleen Nafus, Paul F. Nealey, All track directed self-assembly of block copolymers: process flow and origin of defects Proceedings of SPIE. ,vol. 8323, ,(2012) , 10.1117/12.916410
P. De Schepper, A. Vaglio Pret, E. Altamirano-Sánchez, Z. el Otell, S. De Gendt, Hydrogen plasma treatment: the evolution of roughness in frequency domain Proceedings of SPIE. ,vol. 9054, pp. 1- 1 ,(2014) , 10.1117/12.2046299
Gottlieb S. Oehrlein, Raymond J. Phaneuf, David B. Graves, Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication Journal of Vacuum Science & Technology B. ,vol. 29, pp. 010801- ,(2011) , 10.1116/1.3532949
F. Weilnboeck, R. L. Bruce, S. Engelmann, G. S. Oehrlein, D. Nest, T.-Y. Chung, D. Graves, M. Li, D. Wang, C. Andes, E. A. Hudson, Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. ,vol. 28, pp. 993- 1004 ,(2010) , 10.1116/1.3484249
H. Abgrall, E. Roueff, F. Launay, J.Y. Roncin, J.L. Subtil, The Lyman and Werner band systems of molecular hydrogen Journal of Molecular Spectroscopy. ,vol. 157, pp. 512- 523 ,(1993) , 10.1006/JMSP.1993.1040
L. Ling, X. Hua, X. Li, G. S. Oehrlein, E. A. Hudson, P. Lazzeri, M. Anderle, Investigation of surface modifications of 193 and 248 nm photoresist materials during low-pressure plasma etching Journal of Vacuum Science & Technology B. ,vol. 22, pp. 2594- 2603 ,(2004) , 10.1116/1.1805545
S. Engelmann, R. L. Bruce, T. Kwon, R. Phaneuf, G. S. Oehrlein, Y. C. Bae, C. Andes, D. Graves, D. Nest, E. A. Hudson, P. Lazzeri, E. Iacob, M. Anderle, Plasma-surface interactions of model polymers for advanced photoresists using C4F8∕Ar discharges and energetic ion beams Journal of Vacuum Science & Technology B. ,vol. 25, pp. 1353- 1364 ,(2007) , 10.1116/1.2759935
Efraín Altamirano-Sánchez, Alessandro Vaglio Pret, Roel Gronheid, Werner Boullart, Dry etching challenges for patterning smooth lines: LWR reduction of extreme ultra violet photo resist Proceedings of SPIE. ,vol. 8328, ,(2012) , 10.1117/12.919055
Yuichiro Inatomi, Tetsu Kawasaki, Mitsuaki Iwashita, LWR reduction in ArF resist pattern by resist smoothing process Proceedings of SPIE, the International Society for Optical Engineering. ,vol. 6153, ,(2006) , 10.1117/12.656382
G.P. Patsis, V. Constantoudis, E. Gogolides, Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations Microelectronic Engineering. ,vol. 75, pp. 297- 308 ,(2004) , 10.1016/J.MEE.2004.06.005