A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2.
作者： Youngjo Jin , Dong Hoon Keum , Sung-Jin An , Joonggyu Kim , Hyun Seok Lee
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摘要: … bandgap but different Fermi levels extracted from experiments. … diode behavior is degraded as the Fermi level is upshifted at a … that the Fermi levels for both p-MoSe 2 and n-MoSe 2 are …
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K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, A. K. Geim, Two-dimensional atomic crystals Proceedings of the National Academy of Sciences of the United States of America. ,vol. 102, pp. 10451- 10453 ,(2005) , 10.1073/PNAS.0502848102
C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, J. Hone, Boron nitride substrates for high-quality graphene electronics Nature Nanotechnology. ,vol. 5, pp. 722- 726 ,(2010) , 10.1038/NNANO.2010.172
Nihar R. Pradhan, Daniel Rhodes, Yan Xin, Shahriar Memaran, Lakshmi Bhaskaran, Muhandis Siddiq, Stephen Hill, Pulickel M. Ajayan, Luis Balicas, Ambipolar molybdenum diselenide field-effect transistors: field-effect and Hall mobilities. ACS Nano. ,vol. 8, pp. 7923- 7929 ,(2014) , 10.1021/NN501693D
Pulickel M. Ajayan, Sina Najmaei, Nathan J. Conrad, Peide D. Ye, Yongji Gong, Jun Lou, Xianfan Xu, Han Liu, Zhe Luo, Yexin Deng, Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode ACS Nano. ,vol. 8, pp. 8292- 8299 ,(2014) , 10.1021/NN5027388
Min Sup Choi, Deshun Qu, Daeyeong Lee, Xiaochi Liu, Kenji Watanabe, Takashi Taniguchi, Won Jong Yoo, Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics. ACS Nano. ,vol. 8, pp. 9332- 9340 ,(2014) , 10.1021/NN503284N
Gwan-Hyoung Lee, Young-Jun Yu, Xu Cui, Nicholas Petrone, Chul-Ho Lee, Min Sup Choi, Dae-Yeong Lee, Changgu Lee, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Colin Nuckolls, Philip Kim, James Hone, Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures ACS Nano. ,vol. 7, pp. 7931- 7936 ,(2013) , 10.1021/NN402954E
Joonki Suh, Tae-Eon Park, Der-Yuh Lin, Deyi Fu, Joonsuk Park, Hee Joon Jung, Yabin Chen, Changhyun Ko, Chaun Jang, Yinghui Sun, Robert Sinclair, Joonyeon Chang, Sefaattin Tongay, Junqiao Wu, Doping against the native propensity of MoS2: degenerate hole doping by cation substitution. Nano Letters. ,vol. 14, pp. 6976- 6982 ,(2014) , 10.1021/NL503251H
Marco M. Furchi, Andreas Pospischil, Florian Libisch, Joachim Burgdörfer, Thomas Mueller, Photovoltaic effect in an electrically tunable van der Waals heterojunction. Nano Letters. ,vol. 14, pp. 4785- 4791 ,(2014) , 10.1021/NL501962C
Saptarshi Das, Hong-Yan Chen, Ashish Verma Penumatcha, Joerg Appenzeller, High Performance Multilayer MoS2 Transistors with Scandium Contacts Nano Letters. ,vol. 13, pp. 100- 105 ,(2013) , 10.1021/NL303583V
K. K. Kam, B. A. Parkinson, Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides The Journal of Physical Chemistry. ,vol. 86, pp. 463- 467 ,(1982) , 10.1021/J100393A010