III-V Quantum-Dot Materials and Devices Monolithically Grown on Si Substrates

摘要: The integration of III–V photonics materials and devices with Si microelectronics will enable the fabrication complex optoelectronic circuits, which permit creation long-dreamed chip-to-chip system-to-system optical communications. Direct epitaxial growth semiconductor compounds on substrates is one most promising candidates for platform. quantum dots (QDs) offer an attractive alternative to conventional wells(QWs) building lasing a platform due their unique advantages. We developed long-wavelength InAs/GaAs QD monolithically grown Si, Ge, Ge-on-Si by use Molecular Beam Epitaxy. Room-temperature(RT) at wavelength around 1.3 \(\upmu \)m has been achieved threshold current densities 64.3 A/cm\(^{2}\) operation up 83\(\,^{\circ }\mathrm{{C}}\) Si-based ridge-waveguide lasers as-cleaved facets. electrical properties QDs were further investigated evaluate potential photodiodes. A peak responsivity 5 mA/W was observed 1.28 \)m, while dark two orders magnitude lower than those reported These studies ultimately form basis monolithic 1.3-\(\upmu detectors