Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors
作者： Byung Hwan Chu , Hon-way Lin , Shangjr Gwo , Yu-Lin Wang , S. J. Pearton
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摘要: Chloride ion concentration can be used as a biomarker for the level of pollen exposure in allergic asthma, chronic cough and airway acidification related to respiratory disease. AlGaN/GaN high electron mobility transistor (HEMT) with an InN thin film gate region was real time detection chloride detection. The provided surface sites reversible anion coordination. sensor exhibited significant changes channel conductance upon various concentrations NaCl solutions. tested over range 100 nM μM effect cations on also studied.
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