作者: Dongyun Guo , Takashi Goto , Chuanbin Wang , Qiang Shen , Lianmeng Zhang
DOI: 10.1007/S00339-012-6798-5
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摘要: A BaTi4O9 film was prepared on a Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition method and investigated impedance spectroscopy over ranges of temperature (300–1073 K) frequency (102–107 Hz). Plots between real imaginary parts the (Z′ Z′′) suggest presence two relaxation regimes, which were attributed to grain boundary responses. The conduction both grains boundaries obeys Arrhenius format with activation energies respectively 1.45 1.24 eV. close indicate that in is mainly oxygen vacancies.