EL2 and the electronic structure of the AsGa-Asi pair in GaAs: The role of lattice distortion in the properties of the normal state.

作者: G. A. Baraff , M. Lannoo , M. Schlüter

DOI: 10.1103/PHYSREVB.38.6003

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参考文章(21)
H. J. von Bardeleben, D. Stievenard, J. C. Bourgoin, A. Huber, Identification of EL2 in GaAs Applied Physics Letters. ,vol. 47, pp. 970- 972 ,(1985) , 10.1063/1.95947
H. J. von Bardeleben, D. Stiévenard, D. Deresmes, A. Huber, J. C. Bourgoin, Identification of a defect in a semiconductor: EL2 in GaAs. Physical Review B. ,vol. 34, pp. 7192- 7202 ,(1986) , 10.1103/PHYSREVB.34.7192
B. K. Meyer, D. M. Hofmann, J. R. Niklas, J.-M. Spaeth, Arsenic antisite defect AsGa and EL2 in GaAs. Physical Review B. ,vol. 36, pp. 1332- 1335 ,(1987) , 10.1103/PHYSREVB.36.1332
C. Delerue, M. Lannoo, D. Stiévenard, H. J. von Bardeleben, J. C. Bourgoin, Metastable state of EL2 in GaAs. Physical Review Letters. ,vol. 59, pp. 2875- 2878 ,(1987) , 10.1103/PHYSREVLETT.59.2875
G. A. Baraff, M. Schluter, Need for an acceptor level in the AsGa-Asi model for EL2. Physical Review B. ,vol. 35, pp. 5929- 5932 ,(1987) , 10.1103/PHYSREVB.35.5929
G. A. Baraff, M. Schlüter, Electronic structure total energies, and abundances of the elementary point defects in GaAs Physical Review Letters. ,vol. 55, pp. 1327- 1330 ,(1985) , 10.1103/PHYSREVLETT.55.1327
Giovanni B. Bachelet, Michael Schlüter, Gene A. Baraff, AsGaantisite defect in GaAs Physical Review B. ,vol. 27, pp. 2545- 2547 ,(1983) , 10.1103/PHYSREVB.27.2545
M. Kaminska, M. Skowronski, J. Lagowski, J. M. Parsey, H. C. Gatos, Intracenter transitions in the dominant deep level (EL2) in GaAs Applied Physics Letters. ,vol. 43, pp. 302- 304 ,(1983) , 10.1063/1.94293