作者: Dmitri S. Golubev , Andrei D. Zaikin
DOI: 10.1103/PHYSREVB.69.075318
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摘要: We present a detailed theoretical investigation of the effect Coulomb interactions on electron transport through quantum dots and double-barrier structures connected to voltage source via an arbitrary linear impedance. Combining real time path integral techniques with scattering matrix approach, we derive effective action evaluate current-voltage characteristics at sufficiently large conductances. Our analysis reveals rich variety different regimes, which specify in detail for case chaotic dots. At low energies interaction correction current depends logarithmically temperature voltage. identify two logarithmic regimes crossover between them occurring order inverse dwell electrons dot. also analyze frequency-dependent shot noise elucidate its direct relation effects mesoscopic transport.