Optical characterisation of semiconductor surfaces and interfaces

摘要: Recent developments in optical spectroscopy applied to semiconductor surfaces and interfaces are reviewed. It is shown that, by exploiting the underlying physics of various techniques, or special material structures, submonolayer sensitivity can be obtained using photons as both probe signal. Examples use spectroscopic ellipsometry, surface differential reflectivity, photoabsorption, reflection anisotropy spectroscopy, Raman photoluminescence second-harmonic generation sum-frequency described, with emphasis on studies systems which have been well-characterised conventional probes.