Metal assisted photochemical etching of 4H silicon carbide

摘要: Metal assisted photochemical etching (MAPCE) of 4H–silicon carbide (SiC) in Na2S2O8/HF and H2O2/HF aqueous solutions is investigated with platinum as metallic cathode. The formation process the resulting porous layer studied respect to time, concentration type oxidizing agent. From experiments it concluded that due electron hole pairs generated semiconductor, which stem from UV light irradiation. holes are consumed during oxidation 4H–SiC formed oxide dissolved by HF. To maintain charge balance, agent has take up electrons at Pt/etching solution interface. Total dissolution layers achieved when decreases MAPCE. In combination standard photolithography, definition regions possible. Furthermore chemical micromachining 4 H–SiC room temperature