Tuning critical phase transition in VO2 via interfacial control of normal and shear strain
作者： Yanda Ji , Qiang Yang , Xiyuan Zhang , Ruixing Xu , Weizheng Liang
DOI: 10.1063/1.5128780
关键词:
摘要: Interface strain plays a key role in creating the emergent functional properties of heteroepitaxially correlated materials. Strain that originates from lattice mismatch thin films and substrates has been widely studied to support creation desired functionalities. However, shear induced by symmetry heterostructures rarely considered. Here, we report evidence twin domains stabilized vanadium dioxide (VO2) epitaxial grown on sapphire with miscut along a-plane. A systematic investigation variations, including rotations distortions, reveals both normal can be manipulated vicinal surfaces using different angles. Consequently, critical phenomenon metal-insulator transitions (MITs) VO2 is strongly coupled variations. significantly sharpened MIT transition, over four orders magnitude resistance change, also achieved controlling interfacial strain. Our results demonstrate degree freedom deformation opens door fine-tune oxides aid development electronic devices.
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