SEMICONDUCTOR MEMORY DEVICE

摘要: PURPOSE:To prevent a soft-error, to reduce the capacitance of bit line and integrate semiconductor memory device remarkably by forming storage from conductive film as an information section isolated substrate insulating thin-film transistor, source which is connected shaped upper while being film. CONSTITUTION:A field oxide 2 formed N-type Si 1, SiO2 3 grown in regions except 2, poly-Si 6 phosphorus doped deposited, pattern shaped. An 4 contact-hole bored, boron deposited again, formed, recrystallized through laser-annealing. A gate 9 grown, shaped, electrode 10 formed. diffused, source-drain 7 metallic wiring 11 are