Pulsed laser deposition and characterization of La1−xSrxMnO3

摘要: Abstract La1−xSrxMnO3 manganite films with x=0.15, 0.33 and 0.4 were deposited onto silicon substrates by pulsed laser deposition in an 80/20 Ar/O2 atmosphere at room temperature. After being deposited, the annealed 900 °C air order to obtain desired crystalline phase. Structural characterizations using X-Ray diffraction showed polycrystalline compounds having predominant peaks corresponding perovskite structure. Morphological studies carried out scanning electron microscopy revealed a very rough surface led deducing nature of growth process. Spectral ellipsometry was performed between 1.5 5 eV range temperature, showing electronic transitions near 2.2 4.7 eV thicknesses 94 107 nm.