Influence of the surface on photoluminescence from indium phosphide crystals
作者： R. A. Street , R. H. Williams , R. S. Bauer
DOI: 10.1116/1.570580
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摘要: The photoluminescence of indium phosphide has been measured on crystals in ultrahigh vacuum and subsequently oxidized a controlled manner. luminescence intensity can vary by more than an order magnitude shows close correspondence to the known shift Fermi level at surface under oxidation. We conclude that oxidation‐induced space charge layer is nonradiative due presence electric field. band bending variation be estimated quantitatively from data. influence contamination Schottky barrier formation also reported.
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