Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component

作者: Andrew R. Barron , Andrew N. MacInnes , Aloysius F. Hepp , Phillip P. Jenkins

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摘要: A minority carrier device includes at least one junction of two dissimilar materials, which is a semiconductor, and passivating layer on surface the device. The Group 13 element chalcogenide component. Embodiments include, for example, laser diodes, light emitting heterojunction bipolar transistors, solar cells.

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