Process for manufacturing silicon carbide
作者： Simonpietro Di Pierro , Bruno Aleonard , Matthieu Schwartz
DOI:
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摘要: The invention relates to a process for manufacturing SiC wherein the emissions of polluting gases are minimized, by reduction silicon oxide with an excess carbon, said consisting in electrically heating resistor at heart mixture raw materials carbon-based source chosen from petroleum cokes and silicon, particular silica having purity greater than 95% SiO2, order give rise, temperature above 1500°C, simplified reaction: SiO2 + 3C = 2CO (1), being characterized that first undergoes treatment removing contained hydrogen, such way elemental hydrogen content (TEMH) thereof is less 2% weight.
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