Method of forming viaducts in semiconductor material

摘要: METHOD OF FORMING VIADUCTS IN SEMICONDUCTOR MATERIAL Abstract of the Disclosure This method forming viaducts or "through-holes" in semiconductor material for transistor and integrated circuit fabrication especially ink jet printing systems forms uniform diameter without critical regis-tration masks. A seed layer Cr-Au is sputtered onto a silicon-dioxide substrate. The holes to be made are imaged by photoresist process with 5 µ, thick on this layer. 4 µ gold now applied plating process. After dis-solution contains hole pattern having required diameter. In order make through-hole, substrate has etched. For that purpose, bare surface covered exposed from back through holes;and subsequently developed. Problems owing light diffrac-tion at edges respect great distance mask not antici-pated here because large high tolerances step. Prior etching substrate, so can take place one side only. Now etched until all free. process, extent sub-strate sub-etching small importance as viaduct defined mask. removed surfaces protected against chemical reactions vapor-deposition protective