作者: M. Mazaheri , S. Fallahi , M. Akhavan
DOI: 10.1016/J.PHYSB.2011.05.045
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摘要: Abstract In this paper, structural and electrical transport properties of hexagonal, 4H-type, BaRu1−xMnxO3 ( x = 0 − 0.3 ) , synthesized by the solid-state reaction method at ambient pressure, have been presented. Electrical are measured over a temperature range 10–300 K in magnetic field up to 15 kOe. The low resistivity 10 K T 50 shows quadratic dependence ρ + AT 2 for x=0 sample crossover from T2 1.5 dependence, corresponding Fermi-liquid phase non-Fermi-liquid crossover, x=0.03 sample. Furthermore, Mn doping drives system metallic state insulating ≥ 0.1 which x=0.3 variable hopping behavior below 100 K. At region, large magnetoresistance was observed samples with x=0.2 0.3.