Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics

摘要: Transition-metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS2), are expected to be promising for next generation device applications. The existence of sulfur vacancies formed in MoS2, however, will potentially make devices unstable and problematic. Random telegraphic signals (RTSs) have often been studied small area Si metal-oxide-semiconductor field-effect transistors (MOSFETs) identify the carrier capture emission processes at defects. In this paper, we systemically analyzed RTSs observed atomically thin layer MoS2 FETs. Several types analyzed. One is simple on/off type signals, second multilevel with a superposition third that correlated each other. last one discussed from viewpoint defect-defect interaction FETs weak screening confined two-dimensional electron-gas systems. Furthermore, position defects causing has also investigated by preparing multi-probes. electron beam was locally irradiated intentionally generate channel. It clearly demonstrated channel RTS origins. analysis enables us analyze defect dynamics TMD devices.