作者: O Masayoshi , Hanabatake Hiroyuki
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摘要: PROBLEM TO BE SOLVED: To provide a coating composite for producing an interlayer insulation film in which high Young's modulus, low dielectric constant, and breakdown voltage durable sufficiently the CMP process of copper interconnection semiconductor element can be achieved simultaneously. SOLUTION: The contains (A) silica precursor composed at least one kind compound selected from specified alkoxysilane, its hydrolyzate polycondensate, (B) organic solvent wherein crystallization index, indicative total content metal most 1 ppm, is 0.14-0.63. COPYRIGHT: (C)2003,JPO