RF Performance of Si/SiGe MODFETs:A Simulation Study
作者： S. Roy , A. Asenov , S. Babiker , J. R. Barker , S. P. Beaumont
DOI: 10.1155/1998/29629
关键词:
摘要: The microwave performance potential of Si/SiGe pseudomorphic MODFETs are studied, in comparison to state the art InGaAs HEMTs. Both devices have equivalent structures corresponding a physical HEMT used for calibration. We use an RF analysis technique based on transient Monte Carlo simulations estimate intrinsic noise figures, figures merit fT and fmax, effect contact gate resistances. exhibit velocity overshoot below region. It is shown that difference values can be mainly attributed differences device channel velocity, fmax exhibits strong dependence resistance, eroding some advantage HEMT.
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