A study of deep levels in GaAs by capacitance spectroscopy
作者： D. V. Lang , R. A. Logan
DOI: 10.1007/BF02660189
关键词:
摘要: We show how the DLTS capacitance spectroscopy technique can be used to detect small amounts of deep level impurities in GaAs pn junctions. The DLTS spectra associated with Cu, …
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