作者: R. Kalish
DOI: 10.1533/9780857096685.1.36
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摘要: Abstract: The creation of specific luminescent centers in semiconductors, particular the controlled nitrogen–vacancy (NV) diamond, relies heavily on ion implantation. Furthermore, formation vacancies and various photonic devices for manipulation transportation photons emitted by these rely bond breakage that accompanies In this chapter, we review physics related to slowing down ions stressing its implications implantation doping, introduction sacrificial graphitic regions diamond.