Temperature dependence of the surface plasmon coupling with an InGaN /GaN quantum well
作者： Yen-Cheng Lu , Cheng-Yen Chen , Dong-Ming Yeh , Chi-Feng Huang , Tsung-Yi Tang
DOI: 10.1063/1.2738194
关键词:
摘要: The authors demonstrate the temperature-dependent behavior of surface plasmon (SP) coupling with two InGaN∕GaN quantum-well (QW) structures different internal quantum efficiencies. SP modes are generated at interface between QW and Ag thin films coated on their tops. It is observed that SP-QW rate increases temperature. Such a trend may rely several factors, including availability carriers sufficient momenta for transferring energy momentum into possibly variation density state Although required matching condition only needs thermal corresponding to few tens Kelvins, carrier delocalization process results in significantly higher probability SP-carrier hence coupling.
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