作者: Martin Jay Seamons , Sudha S. R. Rathi , Wendy H. Yeh , Heraldo L. Botelho
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摘要: A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, doped etc., or metal layer tungsten, aluminum poly-silicon. The includes the use of chamber seasoning, variable thickness seasoning film, wider spacing, process gas flows, post-deposition purge with inert gas, and plasma purge, among others, to make deposition film at low temperatures possible without any defects particle contamination.